IMPACT IONIZATION AND POSITIVE CHARGE IN THIN SIO2-FILMS

被引：86

作者：

SHATZKES, M ^{[1
]}

AVRON, M ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3192 / 3202

页数：11

共 28 条

[1]

BATES DR, 1962, ATOMIC MOL PROCESSES, P245

[2] RECOMBINATION MECHANISMS [J].

BONCH-BRUEVICH, VL ;

LANDSBERG, EG .

PHYSICA STATUS SOLIDI, 1968, 29 (01) :9-+

[3] BND EDGE OF AMORPHOUS SIO2 BY PHOTOINJECTION AND PHOTOCONDUCTIVITY MEASUREMENTS [J].

DISTEFANO, TH ;

EASTMAN, DE .

SOLID STATE COMMUNICATIONS, 1971, 9 (24) :2259-+

[4] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J].

DISTEFANO, TH ;

SHATZKES, M .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :685-687

[5] DIELECTRIC INSTABILITY AND BREAKDOWN IN WIDE BANDGAP INSULATORS [J].

DISTEFANO, TH ;

SHATZKES, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :37-46

[6] SODIUM MOBILITY IN IRRADIATED SIO2 [J].

FOWKES, FM ;

WITHERELL, FE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :67-72

[7] ELECTRON HALL EFFECT IN SILICON DIOXIDE [J].

GOODMAN, AM .

PHYSICAL REVIEW, 1967, 164 (03) :1145-&

[8] PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE [J].

GOODMAN, AM .

PHYSICAL REVIEW, 1966, 144 (02) :588-&

[9] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[10] KINETIC-STATISTICAL THEORY OF DIELECTRIC BREAKDOWN IN NONPOLAR CRYSTALS [J].

HELLER, WR .

PHYSICAL REVIEW, 1951, 84 (06) :1130-1150

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