TEMPERATURE-DEPENDENCE OF THE CURRENT IN SIO2 IN THE HIGH-FIELD TUNNELING REGIME

被引：15

作者：

RICCO, B ^{[1
]}

FISCHETTI, MV ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.333044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4322 / 4329

页数：8

共 16 条

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[7]

RON MA, 1981, J APPL PHYS, V52, P2897

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[9] IMPACT IONIZATION AND POSITIVE CHARGE IN THIN SIO2-FILMS [J].

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[10] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

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APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

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