NOVEL MECHANISM FOR TUNNELING AND BREAKDOWN OF THIN SIO2-FILMS

被引：90

作者：

RICCO, B

AZBEL, MY

BRODSKY, MH

机构：

来源：

PHYSICAL REVIEW LETTERS | 1983年 / 51卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.51.1795

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1795 / 1798

页数：4

共 12 条

[1] RESONANCE TUNNELING AND LOCALIZATION SPECTROSCOPY [J].

AZBEL, MY .

SOLID STATE COMMUNICATIONS, 1983, 45 (07) :527-530

[2] TRANSMISSION RESONANCES AND THE LOCALIZATION LENGTH IN ONE-DIMENSIONAL DISORDERED-SYSTEMS [J].

AZBEL, MY ;

SOVEN, P .

PHYSICAL REVIEW B, 1983, 27 (02) :831-835

[3] Wannier Exciton in an electric field. I. Optical absorption by bound and continuum states [J].

Blossey, Daniel F. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :3976-3990

[4] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2 [J].

HARARI, E .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2478-2489

[5] RESONANT TUNNELING THROUGH SI-SIO2 DOUBLE BARRIERS [J].

HIROSE, M ;

MORITA, M ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :561-564

[6] ELECTRICAL BREAKDOWN OF INSULATORS BY ONE-CARRIER IMPACT IONIZATION [J].

KLEIN, N .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5828-5839

[7]

OLIVO P, UNPUB

[8] IMPACT IONIZATION AND POSITIVE CHARGE IN THIN SIO2-FILMS [J].

SHATZKES, M ;

AVRON, M .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3192-3202

[9] BREAKDOWN IN SILICON-OXIDE [J].

SOLOMON, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1122-1130

[10] TRAP-ASSISTED CHARGE INJECTION IN MNOS STRUCTURES [J].

SVENSSON, C ;

LUNDSTROM, I .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4657-4663

← 1 2 →