RESONANT TUNNELING THROUGH SI-SIO2 DOUBLE BARRIERS

被引：24

作者：

HIROSE, M ^{[1
]}

MORITA, M ^{[1
]}

OSAKA, Y ^{[1
]}

机构：

[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIROSHIMA 730,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷

关键词：

D O I：

10.7567/JJAPS.16S1.561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：561 / 564

页数：4

共 12 条

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[7]

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[8] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

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[9]

Osaka Y., 1976, Oyo Buturi, V45, P968

[10] GENERALIZED FORMULA FOR ELECTRIC TUNNEL EFFECT BETWEEN SIMILAR ELECTRODES SEPARATED BY A THIN INSULATING FILM [J].

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