BREAKDOWN IN SILICON-OXIDE

被引：113

作者：

SOLOMON, P ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 05期

关键词：

D O I：

10.1116/1.569344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1122 / 1130

页数：9

共 72 条

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[8] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J].

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[10] DIELECTRIC INSTABILITY AND BREAKDOWN IN SIO2 THIN-FILMS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :50-54

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