FOWLER-NORDHEIM ELECTRON-TUNNELING IN THIN SI-SIO2-AL STRUCTURES

[1] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (02) : 57 - &

[2] BLACKMORE JS, 1962, SEMICONDUCTOR STATIS

[3] DEPP SW, 1972, THESIS U ILLINOIS UR

[4] PROCESSING DEPENDENCE OF METAL TUNNEL-OXIDE SILICON JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 850 - 852

[5] PHOTOEMISSION MEASUREMENTS OF INTERFACE BARRIER ENERGIES FOR TUNNEL OXIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 933 - 935

[6] DUKE CB, 1969, SOLID STATE PHYS, V10

[7] Electron emission in intense electric fields [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) : 173 - 181

[8] GOOD RH, 1956, HDB PHYSIK, V21

[9] ZUR BERECHNUNG DES TUNNELSTROMS DURCH EINE TRAPEZFORMIGE POTENTIALSTUFE [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 949 - &

[10] HARRARI E, 1978, J APPL PHYS, V49, P2478

[1] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (02) : 57 - &

[2] BLACKMORE JS, 1962, SEMICONDUCTOR STATIS

[3] DEPP SW, 1972, THESIS U ILLINOIS UR

[4] PROCESSING DEPENDENCE OF METAL TUNNEL-OXIDE SILICON JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 850 - 852

[5] PHOTOEMISSION MEASUREMENTS OF INTERFACE BARRIER ENERGIES FOR TUNNEL OXIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 933 - 935

[6] DUKE CB, 1969, SOLID STATE PHYS, V10

[7] Electron emission in intense electric fields [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) : 173 - 181

[8] GOOD RH, 1956, HDB PHYSIK, V21

[9] ZUR BERECHNUNG DES TUNNELSTROMS DURCH EINE TRAPEZFORMIGE POTENTIALSTUFE [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 949 - &

[10] HARRARI E, 1978, J APPL PHYS, V49, P2478