PROCESSING DEPENDENCE OF METAL TUNNEL-OXIDE SILICON JUNCTIONS

被引：12

作者：

DRESSENDORFER, PV ^{[1
]}

LAI, SK ^{[1
]}

BARKER, RC ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ENGN & APPL SCI,NEW HAVEN,CT 06520

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 10期

关键词：

D O I：

10.1063/1.91346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：850 / 852

页数：3

共 20 条

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[5]

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[6]

DRESSENDORFER PV, 1978, THESIS YALE U

[7]

HORUICHI M, 1978, J ELECTROCHEM SOC, V125, P766

[8] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J].

KAR, S ;

DAHLKE, WE .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :221-+

[9]

LAI SK, 1978, THESIS YALE U

[10] EFFECT OF GAMMA-RAY IRRADIATION ON SURFACE STATES OF MOS TUNNEL-JUNCTIONS [J].

MA, TP ;

BARKER, RC .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :317-321

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