EFFECT OF GAMMA-RAY IRRADIATION ON SURFACE STATES OF MOS TUNNEL-JUNCTIONS

被引：21

作者：

MA, TP ^{[1
]}

BARKER, RC ^{[1
]}

机构：

[1] YALE UNIV, NEW HAVEN, CT 06520 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.1662978

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：317 / 321

页数：5

共 23 条

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[8]

Hughes H. L., 1964, ELECTRONICS, V37, P58

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