PHOTOEMISSION MEASUREMENTS OF INTERFACE BARRIER ENERGIES FOR TUNNEL OXIDES ON SILICON

被引：36

作者：

DRESSENDORFER, PV ^{[1
]}

BARKER, RC ^{[1
]}

机构：

[1] YALE UNIV,DEPT ENGN & APPL SCI,NEW HAVEN,CT 06520

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 11期

关键词：

D O I：

10.1063/1.91378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：933 / 935

页数：3

共 18 条

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[7] FIELD-DEPENDENT INTERNAL PHOTOEMISSION PROBE OF ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACE [J].

DISTEFANO, TH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :856-859

[8]

DRESSENDORFER PV, UNPUBLISHED

[9]

DRESSENDORFER PV, 1978, THESIS YALE U

[10] DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON [J].

GOBELI, GW ;

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