INTERFACE STATE GENERATION IN THE SI-SIO2 SYSTEM BY PHOTOINJECTING ELECTRONS FROM AN AL FIELD PLATE

被引：29

作者：

PANG, S ^{[1
]}

LYON, SA ^{[1
]}

JOHNSON, WC ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期

关键词：

D O I：

10.1063/1.93243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：709 / 711

页数：3

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