EFFECT OF HOT-ELECTRON INJECTION ON INTERFACE CHARGE-DENSITY AT THE SILICON TO SILICON DIOXIDE INTERFACE

[1] HOT-CARRIER INSTABILITY IN IGFETS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 147 - 148

[2] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[3] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[4] EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 42 - 47

[5] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1103 - +

[6] EFFECT OF ORIENTATION ON SURFACE CHARGE DENSITY AT SILICON-SILICON DIOXIDE INTERFACE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (12) : 958 - &

[7] NAGAI K, 1976, B ELECTROTECH LAB, V40, P23

[8] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[9] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[10] EFFECT OF ELECTRON TRAPPING ON IGFET CHARACTERISTICS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 65 - 76

[1] HOT-CARRIER INSTABILITY IN IGFETS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 147 - 148

[2] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[3] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[4] EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 42 - 47

[5] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1103 - +

[6] EFFECT OF ORIENTATION ON SURFACE CHARGE DENSITY AT SILICON-SILICON DIOXIDE INTERFACE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (12) : 958 - &

[7] NAGAI K, 1976, B ELECTROTECH LAB, V40, P23

[8] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[9] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[10] EFFECT OF ELECTRON TRAPPING ON IGFET CHARACTERISTICS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 65 - 76