EFFECT OF ORIENTATION ON SURFACE CHARGE DENSITY AT SILICON-SILICON DIOXIDE INTERFACE

被引：33

作者：

MIURA, Y

机构：

来源：

关键词：

D O I：

10.1143/JJAP.4.958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：958 / &

共 7 条

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J].

ATALLA, MM ;

TANNENBAUM, E ;

SCHEIBNER, EJ .

BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03) :749-783

[2] ELECTRONIC STATES IN PERTURBED PERIODIC SYSTEMS [J].

JAMES, HM .

PHYSICAL REVIEW, 1949, 76 (11) :1611-1624

[3] EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES [J].

KERR, DR .

LEHMAN, HS .

[5]

LINDNER R, 1962, BELL SYST TECH J, V41, P804

SERAPHIM, DP ;

BRENNEMANN, AE ;

FRIEDMAN, HL ;

DHEURLE, FM .

THOMAS, JE ;

YOUNG, DR .