THE IMPORTANCE OF THE ANODE FIELD IN CONTROLLING THE GENERATION RATE OF THE DONOR STATES AT THE SI-SIO2 INTERFACE

被引：45

作者：

FISCHETTI, MV

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.333953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：575 / 577

页数：3

共 24 条

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