REDUCTION OF ELECTRON TRAPPING IN SILICON DIOXIDE BY HIGH-TEMPERATURE NITROGEN ANNEAL

被引：51

作者：

LAI, SK

YOUNG, DR

CALISE, JA

FEIGL, FJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.329505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5691 / 5695

页数：5

共 15 条

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