ENHANCED CONDUCTION AND MINIMIZED CHARGE TRAPPING IN ELECTRICALLY ALTERABLE READ-ONLY MEMORIES USING OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS

被引：37

作者：

DIMARIA, DJ

DONG, DW

PESAVENTO, FL

LAM, C

BRORSON, SD

机构：

[1] IBM CORP,GTD BURLINGTON,ESSEX JUNCTION,VT 05452

[2] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.333291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3000 / 3019

页数：20

共 34 条

[1]

ABELES B, 1975, ADV PHYS, V24, P407, DOI 10.1080/00018737500101431

[2] HOPPING CONDUCTIVITY IN DISORDERED SYSTEMS [J].

AMBEGAOKAR, V ;

HALPERIN, BI ;

LANGER, JS .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08) :2612-+

[3] CURRENT INDUCED TRAP GENERATION IN SIO2 [J].

BADIHI, A ;

EITAN, B ;

COHEN, I ;

SHAPPIR, J .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :396-398

[4]

CAPECE RP, 1979, ELECTRONICS, V52, P39

[5]

DiMaria D. H., 1981, Insulating Films on Semiconductors. Proceedings of the Second International Conference, INFOS 81, P88

[6]

DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[7] ELECTRICALLY-ALTERABLE MEMORY USING A DUAL ELECTRON INJECTOR STRUCTURE [J].

DIMARIA, DJ ;

DEMEYER, KM ;

DONG, DW .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :179-181

[8] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J].

DIMARIA, DJ ;

GHEZ, R ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4830-4841

[9] ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY USING SI-RICH SIO2 INJECTORS AND A FLOATING POLYCRYSTALLINE SILICON STORAGE LAYER [J].

DIMARIA, DJ ;

DEMEYER, KM ;

SERRANO, CM ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4825-4842

[10] DUAL ELECTRON INJECTOR STRUCTURE [J].

DIMARIA, DJ ;

DONG, DW .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :61-64

← 1 2 3 4 →