ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY USING SI-RICH SIO2 INJECTORS AND A FLOATING POLYCRYSTALLINE SILICON STORAGE LAYER

被引：37

作者：

DIMARIA, DJ

DEMEYER, KM

SERRANO, CM

DONG, DW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.329325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4825 / 4842

页数：18

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