HOLE TRAPPING IN THE BULK OF SIO2 LAYERS AT ROOM-TEMPERATURE

被引：35

作者：

DEKEERSMAECKER, RF ^{[1
]}

DIMARIA, DJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.327357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：532 / 539

页数：8

共 20 条

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DIMARIA, DJ .

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[8] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J].

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[9] LOCATION OF TRAPPED CHARGE IN ALUMINUM-IMPLANTED SIO2 [J].

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) :289-293

[10] CENTROID LOCATION OF IMPLANTED IONS IN SIO2 LAYER OF MOS STRUCTURES USING PHOTO IV TECHNIQUE [J].

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SERRANO, CM .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5441-5444

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