LOCATION OF TRAPPED CHARGE IN ALUMINUM-IMPLANTED SIO2

被引：11

作者：

DIMARIA, DJ

YOUNG, DR

HUNTER, WR

SERRANO, CM

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1978年 / 22卷 / 03期

关键词：

D O I：

10.1147/rd.223.0289

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：289 / 293

页数：5

共 20 条

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[5]

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DIMARIA, DJ ;

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[8] EFFECTS ON INTERFACE BARRIER ENERGIES OF METAL-ALUMINUM OXIDE-SEMICONDUCTOR (MAS) STRUCTURES AS A FUNCTION OF METAL ELECTRODE MATERIAL, CHARGE TRAPPING, AND ANNEALING [J].

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5454-5456

[9] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES [J].

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4073-4077

[10] CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS [J].

DIMARIA, DJ ;

ARNETT, PC .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) :227-244

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