SLOW AND FAST STATES INDUCED BY HOT-ELECTRONS AT SI-SIO2 INTERFACE

被引：70

作者：

FISCHETTI, MV ^{[1
]}

GASTALDI, R ^{[1
]}

MAGGIONI, F ^{[1
]}

MODELLI, A ^{[1
]}

机构：

[1] SGS ATES COMPONENTI ELETTR SPA,PHYS GRP,I-20019 MILANO,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.331010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3136 / 3144

页数：9

共 28 条

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[5] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94
[6] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682
[7] POSITIVE CHARGE EFFECTS ON THE FLAT-BAND VOLTAGE SHIFT DURING AVALANCHE INJECTION ON AL-SIO2-SI CAPACITORS
FISCHETTI, MV
GASTALDI, R
MAGGIONI, F
MODELLI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3129 - 3135
[8] EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2
GDULA, RA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 42 - 47
[9] FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACES
GOETZBER.A
LOPEZ, AD
STRAIN, RJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 90 - 96
[10] TIME-RESOLVED HOLE TRANSPORT IN ALPHA-SIO2
HUGHES, RC
[J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2012 - 2020

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