THE CHARACTERIZATION OF AL2O3 PREPARED BY ANODIC-OXIDATION

被引：10

作者：

YEH, CF

CHENG, JY

LU, JH

机构：

[1] Institute of Electronics, National Chiao Tung University, Hsinchu

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6A期

关键词：

ANODIC OXIDATION; ALUMINUM; ALPHA-SI TFT; HILLOCK; AL2O3; DOUBLE-LAYER;

D O I：

10.1143/JJAP.32.2803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum is a good candidate of low resistivity metal as a gate electrode metal and a gate bus-line metal in amorphous silicon thin-film transistor of liquid crystal display. But it easily brings about hillocks and whiskers during the heat process, and causes defects. Al2O3 formed on aluminum layer is expected to work as a protective layer against hillock formation. The formation of Al2O3 is developed by anodic oxidation method. The electrical characteristics of Al2O3 layers formed at constant DC anodic bias or constant DC current density were investigated. The optimal growth condition of Al2O3 has been developed. In addition, the double-layer of Al2O3/SiN is also shown to be sufficiently protective against hillock formation.

引用

页码：2803 / 2808

页数：6

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