HIGH-PERFORMANCE A-SI-H THIN-FILM TRANSISTOR USING LIGHTLY DOPED CHANNEL

被引：8

作者：

SAH, WJ

LIN, JL

LEE, SC

机构：

[1] Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 03期

关键词：

D O I：

10.1109/16.75182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The amorphous silicon thin-film transistors using a lightly phosphorus-doped channel have been fabricated. The transistors achieved an on/off current ratio exceeding six orders of magnitude and field effect mobility of 0.4 cm2/V . s. These characteristics are much better than those using an undoped channel with the same device structure. Moreover, depletion-mode thin-film transistor can also be implemented using the same process and similar doping level, which is suitable for application in complementary amorphous silicon circuit1.

引用

页码：676 / 678

页数：3

共 8 条

[1]

AST DG, 1984, SEMICONDUCTORS SEM D, pCH7

[2] AMORPHOUS-SILICON LOGIC INTEGRATED-CIRCUITS [J].