AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION

被引：287

作者：

LECOMBER, PG

SPEAR, WE

GHAITH, A

机构：

[1] Carnegie Laboratory of Physics, University of Dundee

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 06期

关键词：

Insulated-gate field-effect transistors; Silicon devices;

D O I：

10.1049/el:19790126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of an insulated-gate field-effect transistor made from amorphous silicon (a-Si) deposited in a glow discharge are discussed. It is suggested that the a-Si device could be applied with advantage in an addressable matrix of a liquid-crystal display panel. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：179 / 181

页数：3

共 10 条

[1] 6X6 INCH 20 LINES-PER-INCH LIQUID-CRYSTAL DISPLAY PANEL
BRODY, TP
ASARS, JA
DIXON, GD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (11) : 995 - 1001
[2] HOLLAHAN JR, 1974, TECHNIQUES APPLICATI, P347
[3] JONES D, UNPUBLISHED
[4] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
MADAN, A
LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257
[5] MADAN A, 1977, 7TH P INT C AM LIQ S, P377
[6] Spear W. E., 1972, Journal of Non-Crystalline Solids, V8-10, P727, DOI 10.1016/0022-3093(72)90220-7
[7] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON
SPEAR, WE
LECOMBER, PG
[J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196
[8] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
SPEAR, WE
LECOMBER, PG
[J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949
[9] DOPED AMORPHOUS-SEMICONDUCTORS
SPEAR, WE
[J]. ADVANCES IN PHYSICS, 1977, 26 (06) : 811 - 845
[10] WILLIAMS RS, UNPUBLISHED

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