DEFECT ANNEALING IN POLYCRYSTALLINE SILICON FILMS

被引：2

作者：

DVURECHENSKY, AV ^{[1
]}

GERASIMENKO, NN ^{[1
]}

POTAPOVA, LP ^{[1
]}

机构：

[1] KRASNOYARSK STATE UNIV,KRASNOYARSK,USSR

来源：

关键词：

D O I：

10.1016/0040-6090(78)90175-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：329 / 332

页数：4

共 10 条

[1]

BARANSKY PI, 1974, SEMICONDUCTOR ELECTR, P241

[2]

GEGUSIN YE, 1976, WHY HOW DO VOIDS DIS, P9

[3]

GERASIMENKO NN, 1972, FIZ TEKH POLUPROV, V6, P1111

[4]

GERASIMENKO NN, 1973, FIZ TEKH POLUPROV, V7, P2297

[5]

GERASIMENKO NN, 1972, FIZ TEKH POLUPROV, V6, P987

HASEGAWA, S ;

ICHIDA, K ;

SHIMIZU, T .

[7]

Hoffman R. W., 1966, PHYS THIN FILMS, VVol. 3, pp. 211

[8] CHEMICALLY VAPOR-DEPOSITED POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI .

IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (04) :221-229

[9] PREPARATION AND PROPERTIES OF ELEMENTAL SEMICONDUCTOR THIN-FILMS [J].

WATTS, BE .

[10]

WOLF HF, 1969, SILICON SEMICONDUCTO, P101