ANALYSIS OF MULTISECTION AND MULTIELECTRODE SEMICONDUCTOR-LASERS

被引：14

作者：

BONELLO, R

MONTROSSET, I

机构：

[1] Dipartimento di Elettronica, Politecnico di Torino, 10129, Torino

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1992年 / 10卷 / 12期

关键词：

D O I：

10.1109/50.202843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a general computer code is presented for the analysis of multisection and multielectrode laser structures. The code allows threshold and above-threshold analysis with uniform or nonuniform injection; temperature effects on material parameters are accounted for, as well as spatial hole burning, non linear gain, electrical leakage etc. As an example, linewidth, side mode suppression ratio and wavelength versus output optical power in various quarter-wave shifted DFB lasers are evaluated and discussed.

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页码：1890 / 1900

页数：11

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