SEMICONDUCTOR-LASER AMPLIFIER OPTIMIZATION - AN ANALYTICAL AND EXPERIMENTAL-STUDY

被引：20

作者：

GILLNER, L ^{[1
]}

GOOBAR, E ^{[1
]}

THYLEN, L ^{[1
]}

GUSTAVSSON, M ^{[1
]}

机构：

[1] ERICSSON TELECOM AB,DEPT LINE TRANSMISS & FIBRE OPT,S-12625 STOCKHOLM,SWEDEN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 08期

关键词：

D O I：

10.1109/3.34041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1822 / 1827

页数：6

共 13 条

[1] Adams M. J., 1985, IEE Proceedings J (Optoelectronics), V132, P58, DOI 10.1049/ip-j.1985.0012
[2] DESIGN AND REALIZATION OF HIGH-GAIN 1.5 MU-M SEMICONDUCTOR TW OPTICAL AMPLIFIERS
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FERNIER, B
BENOIT, J
SIMON, JC
LANDOUSIES, B
[J]. ELECTRONICS LETTERS, 1987, 23 (06) : 254 - 256
[3] GRANESTRAND P, 1986, FEB IGWO 86 ATL
[4] PERFORMANCE PREDICTIONS FROM A NEW OPTICAL AMPLIFIER MODEL
HENNING, ID
ADAMS, MJ
COLLINS, JV
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) : 609 - 613
[5] CROSSTALK IN 1.5-MU-M INGAASP OPTICAL AMPLIFIERS
LASSEN, HE
HANSEN, PB
STUBKJAER, KE
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (10) : 1559 - 1565
[6] HOMOGENEOUS GAIN SATURATION IN 1.5-MU-M INGAASP TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIERS
MUKAI, T
INOUE, K
SAITOH, T
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 381 - 383
[7] SEMICONDUCTOR-LASER OPTICAL AMPLIFIERS FOR USE IN FUTURE FIBER SYSTEMS
OMAHONY, MJ
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (04) : 531 - 544
[8] CALCULATED SPONTANEOUS EMISSION FACTOR FOR DOUBLE-HETEROSTRUCTURE INJECTION-LASERS WITH GAIN-INDUCED WAVEGUIDING
PETERMANN, K
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) : 566 - 570
[9] INTEGRATED-OPTIC DEVICE FOR HIGH-SPEED DATABUSES
THYLEN, L
DJUPSJOBACKA, A
JANSON, M
DOLDISSEN, W
[J]. ELECTRONICS LETTERS, 1985, 21 (11) : 491 - 493
[10] AMPLIFIED SPONTANEOUS EMISSION AND GAIN CHARACTERISTICS OF FABRY-PEROT AND TRAVELING WAVE TYPE SEMICONDUCTOR-LASER AMPLIFIERS
THYLEN, L
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) : 1532 - 1537

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