DEGRADATION OF METAL-OXIDE-SEMICONDUCTOR DEVICES CAUSED BY IRON IMPURITIES ON THE SILICON-WAFER SURFACE

被引：44

作者：

TAKIZAWA, R

NAKANISHI, T

OHSAWA, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 12期

关键词：

D O I：

10.1063/1.339822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4933 / 4935

页数：3

相关论文

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[2] CATASTROPHIC BREAKDOWN IN SILICON-OXIDES - THE EFFECT OF FE IMPURITIES AT THE SIO2-SI INTERFACE
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