CATASTROPHIC BREAKDOWN IN SILICON-OXIDES - THE EFFECT OF FE IMPURITIES AT THE SIO2-SI INTERFACE

被引：57

作者：

HONDA, K

NAKANISHI, T

OHSAWA, A

TOYOKURA, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1960 / 1963

页数：4

共 16 条

[1] SI/SIO2 INTERFACE ROUGHNESS - STRUCTURAL OBSERVATIONS AND ELECTRICAL CONSEQUENCES [J].

CARIM, AH ;

BHATTACHARYYA, A .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :872-874

[2] DIELECTRIC INSTABILITY AND BREAKDOWN IN WIDE BANDGAP INSULATORS [J].

DISTEFANO, TH ;

SHATZKES, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :37-46

[3]

DISTEFANO TH, 1972, J APPL PHYS, V44, P52

[4] BREAKDOWN IN SILICON-OXIDES CORRELATION WITH CU PRECIPITATES [J].

HONDA, K ;

OHSAWA, A ;

TOYOKURA, N .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :270-271

[5] BREAKDOWN IN SILICON-OXIDES .2. CORRELATION WITH FE PRECIPITATES [J].

HONDA, K ;

OHSAWA, A ;

TOYOKURA, N .

APPLIED PHYSICS LETTERS, 1985, 46 (06) :582-584

[6]

HONDA K, UNPUB

[7]

KATZ LE, 1974, PHILOS MAG, V30, P1419

[8]

Landau L. D., 1960, ELECTRODYNAMICS CONT

[9] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

[10] LEAKAGE AND BREAKDOWN IN THIN OXIDE CAPACITORS - CORRELATION WITH DECORATED STACKING-FAULTS [J].

LIN, PSD ;

MARCUS, RB ;

SHENG, TT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) :1878-1883

← 1 2 →