SI/SIO2 INTERFACE ROUGHNESS - STRUCTURAL OBSERVATIONS AND ELECTRICAL CONSEQUENCES

被引：62

作者：

CARIM, AH ^{[1
]}

BHATTACHARYYA, A ^{[1
]}

机构：

[1] SIGNET CORP,PHILIPS RES LABS SUNNYVALE,SUNNYVALE,CA 94086

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.95870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：872 / 874

页数：3

共 23 条

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