STRESS IN THERMAL SIO2 DURING GROWTH

Stress present in thermal SiO2 at temperatures during growth in wet O2 has been measured as a function of growth temperature. During growth at 950°C and below, compressive stress on the order of 7×109 dyn/cm2 is generated in the SiO2. During growth at 975 and 1000°C, the SiO2 grows in a stress-free state. The results, which are consistent with a viscous flow point somewhere between 950 and 975°C, are of value in avoiding mechanical failure effects in integrated-circuit processing.