TEMPERATURE-DEPENDENCE OF CRITICAL STRESS IN OXYGEN-FREE SILICON

[1] Burenkov Yu. A., 1974, Soviet Physics - Solid State, V16, P963

[2] Gubanov A. I., 1972, Soviet Physics - Solid State, V14, P372

[3] TEMPERATURE DISTRIBUTION AND STRESSES IN CIRCULAR WAFERS IN A ROW DURING RADIATIVE COOLING [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4413 - +

[4] EFFECTS OF ION-IMPLANTATION ON SUBSTRATE HARDENING AND FILM STRESS REDUCTION AND THEIR EFFECT ON YIELD OF BIPOLAR-TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3259 - 3265

[5] METHOD FOR FINDING CRITICAL STRESSES OF DISLOCATION MOVEMENT [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 139 - 141

[6] INDENTATION DISLOCATION ROSETTES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1470 - 1472

[7] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 53 - 55

[8] HU SM, 1975, J APPL PHYS, V46, P1465, DOI 10.1063/1.321796

[9] NIKANOROV SP, 1972, FIZ TVERD TELA+, V13, P2516

[1] Burenkov Yu. A., 1974, Soviet Physics - Solid State, V16, P963

[2] Gubanov A. I., 1972, Soviet Physics - Solid State, V14, P372

[3] TEMPERATURE DISTRIBUTION AND STRESSES IN CIRCULAR WAFERS IN A ROW DURING RADIATIVE COOLING [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4413 - +

[4] EFFECTS OF ION-IMPLANTATION ON SUBSTRATE HARDENING AND FILM STRESS REDUCTION AND THEIR EFFECT ON YIELD OF BIPOLAR-TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3259 - 3265

[5] METHOD FOR FINDING CRITICAL STRESSES OF DISLOCATION MOVEMENT [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 139 - 141

[6] INDENTATION DISLOCATION ROSETTES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1470 - 1472

[7] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 53 - 55

[8] HU SM, 1975, J APPL PHYS, V46, P1465, DOI 10.1063/1.321796

[9] NIKANOROV SP, 1972, FIZ TVERD TELA+, V13, P2516