DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON

[1] BULLOUGH R, 1963, PROG SEMICOND, V7, P99

[2] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436

[3] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 887 - 893

[4] THE SOLUBILITY OF OXYGEN IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) : 214 - 216

[5] INDENTATION DISLOCATION ROSETTES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1470 - 1472

[6] EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 1869 - 1874

[7] HU SM, 1975, J APPL PHYS, V46, P1465, DOI 10.1063/1.321796

[8] HU SM, 1973, ATOMIC DIFFUSION SEM, P306

[9] HU SM, UNPUBLISHED

[10] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554

[1] BULLOUGH R, 1963, PROG SEMICOND, V7, P99

[2] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436

[3] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 887 - 893

[4] THE SOLUBILITY OF OXYGEN IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) : 214 - 216

[5] INDENTATION DISLOCATION ROSETTES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1470 - 1472

[6] EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 1869 - 1874

[7] HU SM, 1975, J APPL PHYS, V46, P1465, DOI 10.1063/1.321796

[8] HU SM, 1973, ATOMIC DIFFUSION SEM, P306

[9] HU SM, UNPUBLISHED

[10] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554