学术探索
学术期刊
新闻热点
数据分析
智能评审

BREAKDOWN IN SILICON-OXIDES CORRELATION WITH CU PRECIPITATES

被引：97
作者：
HONDA, K
OHSAWA, A
TOYOKURA, N
机构：
来源：
APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 03期
关键词：
D O I：
10.1063/1.95168
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：270 / 271
页数：2
相关论文
共 8 条
[1]  
GREEN JM, 1974, J ELECTRON MATER, V3, P2
[2]   TUNNELING CURRENT MICROSCOPY [J].
LIN, PSD ;
LEAMY, HJ .
APPLIED PHYSICS LETTERS, 1983, 42 (08) :717-719
[3]   LEAKAGE AND BREAKDOWN IN THIN OXIDE CAPACITORS - CORRELATION WITH DECORATED STACKING-FAULTS [J].
LIN, PSD ;
MARCUS, RB ;
SHENG, TT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) :1878-1883
[4]   ROLE OF POINT-DEFECTS IN GROWTH OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON [J].
MURARKA, SP .
PHYSICAL REVIEW B, 1977, 16 (06) :2849-2857
[5]   ROLE OF POINT-DEFECTS IN THE GROWTH OF THE OXIDATION-INDUCED STACKING-FAULTS IN SILICON .2. RETROGROWTH, EFFECT OF HCL OXIDATION AND ORIENTATION [J].
MURARKA, SP .
PHYSICAL REVIEW B, 1980, 21 (02) :692-701
[6]  
OHSAWA A, UNPUB
[7]   OXIDATION-INDUCED STACKING-FAULTS IN SILICON .1. NUCLEATION PHENOMENON [J].
RAVI, KV ;
VARKER, CJ .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :263-271
[8]  
WOLF HF, 1969, SILICON SEMICONDUCTO, P155
1