ROLE OF POINT-DEFECTS IN GROWTH OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

被引：41

作者：

MURARKA, SP ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.16.2849

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：2849 / 2857

页数：9

相关论文

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