BREAKDOWN IN SILICON-OXIDES .2. CORRELATION WITH FE PRECIPITATES

被引：49

作者：

HONDA, K

OHSAWA, A

TOYOKURA, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.95547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：582 / 584

页数：3

共 9 条

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[6] METAL IMPURITIES NEAR THE SIO2-SI INTERFACE [J].

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[7] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .2. INFLUENCE OF PROCESSING AND MATERIALS [J].

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[9]

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