PHOTOLUMINESCENCE STUDY OF TYPE-I AND TYPE-II GAAS/GAP STRAINED-LAYER SUPERLATTICES GROWN ON GAAS SUBSTRATES

被引：10

作者：

ARMELLES, G ^{[1
]}

RECIO, M ^{[1
]}

MELENDEZ, J ^{[1
]}

RUIZ, A ^{[1
]}

BRIONES, F ^{[1
]}

KHIROUNI, K ^{[1
]}

BARRAU, J ^{[1
]}

机构：

[1] INST NATL SCI APPL, PHYS SOLIDE LAB, F-31077 TOULOUSE, FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 09期

关键词：

D O I：

10.1143/JJAP.28.L1495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1495 / L1498

页数：4

共 16 条

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[10] DEFORMATION POTENTIALS OF THE DIRECT AND INDIRECT ABSORPTION EDGES OF GAP
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