BAND OFFSETS IN GAAS/AMORPHOUS GE AND GAP/AMORPHOUS GE HETEROJUNCTIONS MEASURED BY INTERNAL PHOTOEMISSION

被引：14

作者：

COLUZZA, C ^{[1
]}

LAMA, F ^{[1
]}

FROVA, A ^{[1
]}

PERFETTI, P ^{[1
]}

QUARESIMA, C ^{[1
]}

CAPOZI, M ^{[1
]}

机构：

[1] CNR,IST STRUTTURA MAT,I-00064 FRASCATI,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3304 / 3306

页数：3

共 14 条

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[2] STRUCTURAL AND OPTICAL-PROPERTIES OF AMORPHOUS-GERMANIUM - AMORPHOUS-GERMANIUM .3. OPTICAL-PROPERTIES
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TEMKIN, RJ
PAUL, W
[J]. ADVANCES IN PHYSICS, 1973, 22 (05) : 643 - 665
[3] STUDY OF THE BAND DISCONTINUITIES AT THE A-SIH/C-SI INTERFACE BY INTERNAL PHOTOEMISSION
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MARFAING, Y
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 987 - 990
[4] PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE
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[J]. PHYSICAL REVIEW, 1966, 152 (02): : 785 - +
[5] ELEMENTARY THEORY OF HETEROJUNCTIONS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021
[6] ENERGY-BAND DISCONTINUITIES IN HETEROJUNCTIONS MEASURED BY INTERNAL PHOTOEMISSION
HEIBLUM, M
NATHAN, MI
EIZENBERG, M
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 503 - 505
[7] ENERGY-BAND DISCONTINUITIES IN HETEROJUNCTIONS MEASURED BY INTERNAL PHOTOEMISSION
HEIBLUM, M
NATHAN, MI
EIZENBERG, M
[J]. SURFACE SCIENCE, 1986, 174 (1-3) : 318 - 319
[8] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1944 - 1956
[9] MARGARITONDO G, 1987, HETEROJUNCTION BAND, pCH2
[10] ENERGY-BAND DISCONTINUITIES IN A HETEROJUNCTION OF AMORPHOUS HYDROGENATED SI AND CRYSTALLINE SI MEASURED BY INTERNAL PHOTOEMISSION
MIMURA, H
HATANAKA, Y
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 326 - 328

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