ENERGY-BAND DISCONTINUITIES IN HETEROJUNCTIONS MEASURED BY INTERNAL PHOTOEMISSION

被引：53

作者：

HEIBLUM, M

NATHAN, MI

EIZENBERG, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 05期

关键词：

D O I：

10.1063/1.96107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：503 / 505

页数：3

共 25 条

[1]

[Anonymous], UNPUB

[2] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS [J].

ARNOLD, D ;

KETTERSON, A ;

HENDERSON, T ;

KLEM, J ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1237-1239

[3] ENERGY BAND-GAP DISCONTINUITIES IN GAAS-(AL,GA)AS HETEROJUNCTIONS [J].

BATEY, J ;

WRIGHT, SL ;

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :484-487

[4] GROWTH OF MOLYBDENUM AND TUNGSTEN ON GAAS IN A MOLECULAR-BEAM EPITAXY SYSTEM [J].

BLOCH, J ;

HEIBLUM, M ;

KOMEM, Y .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1092-1094

[5]

CASEY HC, 1978, HETEROJUNCTION LAS A

[6] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[7] EFFECTS ON INTERFACE BARRIER ENERGIES OF METAL-ALUMINUM OXIDE-SEMICONDUCTOR (MAS) STRUCTURES AS A FUNCTION OF METAL ELECTRODE MATERIAL, CHARGE TRAPPING, AND ANNEALING [J].

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5454-5456

[8] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

DINGLE, R ;

WIEGMANN, W ;

HENRY, CH .

PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830

[9]

DINGLE R, 1977, 6TH P INT S GAAS REL, V33, P210

[10] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].

Fowler, RH .

PHYSICAL REVIEW, 1931, 38 (01) :45-56

← 1 2 3 →