RESONANT TUNNELING IN AMORPHOUS-SILICON-BARRIER JOSEPHSON-JUNCTIONS

被引：9

作者：

BRADLEY, P ^{[1
]}

RUBY, W ^{[1
]}

HEBERT, D ^{[1
]}

VANDUZER, T ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 12期

关键词：

D O I：

10.1063/1.343610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5872 / 5879

页数：8

共 18 条

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[9] DIFFERENTIAL CONDUCTANCE IN 3-DIMENSIONAL RESONANT TUNNELING [J].

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[10]

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