PARTIALLY OXIDIZED AMORPHOUS-SILICON AS THE TUNNELING BARRIER FOR JOSEPHSON DEVICES

被引：10

作者：

CELASCHI, S

机构：

来源：

关键词：

D O I：

10.1063/1.337644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：296 / 303

页数：8

共 35 条

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[4]

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[5]

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[6]

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[7]

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DYNES, RC ;

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[9] NIOBIUM OXIDE BARRIER TUNNEL JUNCTION [J].

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RAIDER, SI ;

OOSENBRUG, A ;

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WALTER, W .

[10]

Burstein E., 1969, TUNNELING PHENOMENA