INSITU SCANNING TUNNELING MICROSCOPY OF COPPER DEPOSITION WITH BENZOTRIAZOLE

被引：61

作者：

ARMSTRONG, MJ

MULLER, RH

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 08期

关键词：

D O I：

10.1149/1.2085965

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The submicron topography of Cu deposits has been studied with scanning tunneling microscopy to investigate the effect of benzotriazole in the initial stages of deposition. The presence of benzotriazole results in a marked increase in over-potential for the deposition. It is found to eliminate the preferential growth of specific crystallographic planes and the formation of crystal facets. The number density of nuclei, determined from Fourier transforms of the surface profiles of 7 nm thick films, is found to increase with increasing overpotential of the deposition but is independent of the presence of the inhibitor.

引用

页码：2303 / 2307

页数：5

共 11 条

[1] [Anonymous], ENCY ELECTROCHEMISTR
[2] STM OBSERVATIONS OF ELECTRODEPOSITED COPPER UNDER POTENTIAL CONTROL AND OPEN CIRCUIT
ARMSTRONG, MJ
MULLER, RH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (02) : 584 - 585
[3] ARMSTRONG MJ, 1989, ELECTROCHEMICAL SOC, V89, P744
[4] ARMSTRONG MJ, 1990, THESIS U CALIFORNIA
[5] ARMSTRONG MJ, 1990, ELECTROCHEMICAL SOC, V90, P991
[6] SCANNING TUNNELING MICROSCOPY
HANSMA, PK
TERSOFF, J
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : R1 - R23
[7] KARDOS O, 1962, ADV ELECTROCHEMISTRY, V2
[8] Loshkarev Yu.M., 1974, ELEKTROKHIMIYA, V10, P723
[9] MULIN W, 1975, CRYST GROWTH, P300
[10] PRALL JK, 1964, T I MET FINISH, V41, P29

← 1 2 →