HIGH-SPEED ENHANCEMENT-MODE GAAS-MESFET LOGIC

被引：10

作者：

MIZUTANI, T

KATO, N

IDA, M

OHMORI, M

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1980年 / 28卷 / 05期

关键词：

D O I：

10.1109/TMTT.1980.1130104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：479 / 483

页数：5

共 12 条

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ARNODO, C .

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[2] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J].

EDEN, RC ;

WELCH, BM ;

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LONG, SI .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :221-239

[3] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI [J].

EDEN, RC ;

WELCH, BM ;

ZUCCA, R .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :419-426

[4]

GREILING PT, 1978, JUN DEV RES C

[5] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].

HASEGAWA, H ;

HARTNAGEL, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723

[6]

ISHIKAWA H, 1977, ISSCC DIG TECH PAPER, P200

[7]

LUNDGREN RE, 1979, DRC DIG TECH PAP MPA, V2

[8]

MICHEEL LJ, 1978 IEEE MTT S INT, P50

[9]

MIZUTANI T, 1979, 1ST IEEE MTT S SPEC, P93

[10]

NOTTHOFF JK, 1975, IEDM TECH DIG, P624

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