HYDROGEN-DONOR-INDUCED FREE-EXCITON SPLITTING IN GAAS

被引：1

作者：

CAPIZZI, M ^{[1
]}

EMILIANI, V ^{[1
]}

FROYA, A ^{[1
]}

SARTO, F ^{[1
]}

SACKS, RN ^{[1
]}

机构：

[1] UNITED TECHNOL RES CTR,E HARTFORD,CT 06108

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.47.12563

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Liquid-helium photoluminescence spectra have been taken in nominally undoped, donor-free GaAs grown by molecular-beam epitaxy and exposed to increasing doses of hydrogen irradiation. The narrow single free-exciton line observed in the untreated sample evolves into a broader doublet in the hydrogenated sample in the same way as was observed in high-purity GaAs on going from p-type to weakly n-type material. This behavior is highly suggestive of the activation of an exciton-polariton scattering mechanism by neutral donors, and provides an argument, in addition to existing experimental and theoretical evidence, in favor of a hydrogen-induced donorlike state. Measurements at different exciting wavelengths and bath temperatures support the model.

引用

页码：12563 / 12567

页数：5

共 30 条

[1] LUMINESCENCE FROM EXCITON POLARITONS IN WEAKLY EXCITED GAAS BASED ON EXCITON-ELECTRON COLLISIONS [J].