COBALT DISILICIDE (COSI2) SCHOTTKY CONTACTS TO 6H-SIC

被引：13

作者：

LUNDBERG, N

OSTLING, M

机构：

[1] Royal Institute of Technology, Department of Electronin, Kista-Stockholm, S164 40

[2] Standford University, CIS, Stanford, CA

来源：

PHYSICA SCRIPTA | 1994年 / 54卷

关键词：

D O I：

10.1088/0031-8949/1994/T54/066

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Schottky contacts using CoSi2 to both n- and p-type 6H-SiC were fabricated The contacts revealed good rectifying characteristics after annealing at 700 degrees C. Low leakage currents and exponentially increasing currents over at least 5 decades were obtained in the forward bias mode. C-V- and I-V-measurements were used to establish the Schottky barrier heights for CoSi, to 6H-SiC, 1.05 +/- 0.05eV and 1.90 +/- 0.05eV for n- and p-type respectively. Further annealing at 900 degrees C changed the Schottky barrier heights on both n- and p-type significantly.

引用

页码：273 / 277

页数：5