THERMODYNAMIC CONSIDERATIONS OF P-N-JUNCTION CAPACITANCE

被引：10

作者：

HEALD, DL ^{[1
]}

ORDUNG, PF ^{[1
]}

SKALNIK, JG ^{[1
]}

NANSEN, EN ^{[1
]}

机构：

[1] UNIV CALIF,DEPT ELECT ENGN,SANTA BARBARA,CA 93106

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 09期

关键词：

D O I：

10.1016/0038-1101(73)90207-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1055 / 1065

页数：11

共 14 条

[1] ACCURATE NUMERICAL STEADY-STATE SOLUTIONS FOR A DIFFUSED 1-DIMENSIONAL JUNCTION DIODE [J].

ARANDJELOVIC, V .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :865-+

[2] CAPACITANCE OF P-N JUNCTIONS - SPACE-CHARGE CAPACITANCE [J].

CHANG, YF .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2337-&

[3]

CHANG YF, 1967, SOLID STATE ELECTRON, V10, P281

[4]

CHAWLA BR, 1971, IEEE T ELECTRON DEVI, VED18, P178

[5] P-N TRANSITION CAPACITANCE [J].

DJURIC, Z ;

SMILJANIC, M ;

TJAPKIN, D .

SOLID-STATE ELECTRONICS, 1971, 14 (06) :457-+

[6] DEPLETION-LAYER CAPACITANCE OF P+N STEP JUNCTIONS [J].

GUMMEL, HK ;

SCHARFET.DL .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) :2148-&

[7]

HACTEL GD, 1972, P IEEE, V60, P86

[8]

HEALD DL, 1971, THESIS U CALIFORNIA

[9]

HEALD DL, 1971, 6 IEEE REG C

[10] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].

KENNEDY, DP ;

MURLEY, PC ;

KLEINFELDER, W .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) :399-+

← 1 2 →