P-N TRANSITION CAPACITANCE

被引：7

作者：

DJURIC, Z

SMILJANIC, M

TJAPKIN, D

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 06期

关键词：

D O I：

10.1016/0038-1101(71)90055-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：457 / +

页数：1

共 15 条

[1]

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[2]

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[4]

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[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) :399-+

[8] SPACE-CHARGE CAPACITANCE OF ASYMMETRIC ABRUPT P-N JUNCTIONS [J].

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JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :3034-+

[9] CAPACITANCE MEASUREMENTS ON ALLOYED INDIUM-GERMANIUM JUNCTION DIODES [J].

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JOURNAL OF APPLIED PHYSICS, 1955, 26 (12) :1514-1517

[10] NUMERICAL CALCULATIONS OF CAPACITANCE OF LINEARLY GRADED SI P-N JUNCTIONS [J].

NUYTS, W ;

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