SOME EFFECTS OF PLANAR DEFECTS NEAR SI-SIO2 INTERFACE ON ELECTRICAL-PROPERTIES OF SILICON-ON-SAPPHIRE-MOS DEVICES

被引：5

作者：

ABRAHAMS, MS

HAM, WE

机构：

来源：

关键词：

D O I：

10.1063/1.90500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：773 / 775

页数：3

共 7 条

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

[2] CROSS-SECTIONAL SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

[3]

CULLIS AG, 1972, THESIS OXFORD U

[4]

Ham W. E., 1976, Electrochemical Society Fall Meeting. (Extended abstracts only received), P462

[5]

HAM WE, 1977, RCA REV, V38, P351

[6]

HAM WE, 1969, HETEROEPITAXIAL SEMI, P568

WEITZEL, CE ;

SMITH, RT .