SAPPHIRE SUBSTRATE MISORIENTATION AND SOS-MOS TRANSISTOR PERFORMANCE

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 325 - 327

[2] RESIDUAL STRESS IN EPITAXIAL SILICON FILM ON SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 994 - +

[3] CULLEN CW, 1971, J CRYSTAL GROWTH, V9, P107

[4] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2700 - &

[5] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[6] HSU ST, 1975, RCA REV, V36, P240

[7] STRESS-INDUCED ANISOTROPY IN ELECTRICAL PROPERTIES OF SI-AL2O3 [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2849 - 2863

[8] LOW-THRESHOLD LOW-POWER CMOS-SOS FOR HIGH-FREQUENCY COUNTER APPLICATIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (02) : 329 - 336

[9] ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2770 - +

[10] EFFECT OF ARSENIC IN IMPROVING LIFETIME IN SILICON-ON-SAPPHIRE FILMS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 505 - 506

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 325 - 327

[2] RESIDUAL STRESS IN EPITAXIAL SILICON FILM ON SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 994 - +

[3] CULLEN CW, 1971, J CRYSTAL GROWTH, V9, P107

[4] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2700 - &

[5] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[6] HSU ST, 1975, RCA REV, V36, P240

[7] STRESS-INDUCED ANISOTROPY IN ELECTRICAL PROPERTIES OF SI-AL2O3 [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2849 - 2863

[8] LOW-THRESHOLD LOW-POWER CMOS-SOS FOR HIGH-FREQUENCY COUNTER APPLICATIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (02) : 329 - 336

[9] ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2770 - +

[10] EFFECT OF ARSENIC IN IMPROVING LIFETIME IN SILICON-ON-SAPPHIRE FILMS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 505 - 506