EFFECT OF ARSENIC IN IMPROVING LIFETIME IN SILICON-ON-SAPPHIRE FILMS

被引：11

作者：

MCGREIVY, DJ ^{[1
]}

VISWANAT.CR ^{[1
]}

机构：

[1] UNIV CALIF,SCH ENGN & APPL SCI,LOS ANGELES,CA 90024

来源：

关键词：

D O I：

10.1063/1.1655567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：505 / 506

页数：2

共 9 条

[1] DIFFUSED DIODES IN SILICON-ON-SAPPHIRE
DUMIN, DJ
SILVER, RS
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 353 - +
[2] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
[J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387
[3] MANASEVIT HM, 1966, T METALL SOC AIME, V236, P275
[4] MCGREIVY DJ, 1973, THESIS UCLA
[5] MCGREIVY DJ, UNPUBLISHED
[6] CORRELATION OF ION CHANNELING AND ELECTRON-MICROSCOPY RESULTS IN EVALUATION OF HETEROEPITAXIAL SILICON
PICRAUX, ST
THOMAS, GJ
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 594 - 602
[7] SILICON-ON-SAPPHIRE WITH MICROSECOND CARRIER LIFETIMES
SCHRODER, DK
RAICHOUD.P
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (09) : 455 - 457
[8] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
[9] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30