STRESS-INDUCED ANISOTROPY IN ELECTRICAL PROPERTIES OF SI-AL2O3

[1] RESIDUAL STRESS IN EPITAXIAL SILICON FILM ON SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 994 - +

[2] AUSTERMAN SB, COMMUNICATION

[3] The thermal expansion of some refractory oxides [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1931, 14 (11) : 795 - 810

[4] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2700 - &

[5] HEARMON RFS, 1969, LANDOLT BORNSTEIN NU, V3, P3

[6] HUGHES A, UNPUBLISHED

[7] ANISOTROPY IN ELECTRICAL PROPERTIES OF [001] SI/[0112] AI2O3 [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2304 - 2310

[8] MANASEVIT HM, 1966, MET SOC AIME, V242, P465

[9] USE OF PIEZORESISTIVE MATERIALS IN THE MEASUREMENT OF DISPLACEMENT, FORCE, AND TORQUE [J]. JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1957, 29 (10) : 1096 - 1101

[10] MASON WP, 1960, 15NY60 INSTR SOC AM

[1] RESIDUAL STRESS IN EPITAXIAL SILICON FILM ON SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 994 - +

[2] AUSTERMAN SB, COMMUNICATION

[3] The thermal expansion of some refractory oxides [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1931, 14 (11) : 795 - 810

[4] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2700 - &

[5] HEARMON RFS, 1969, LANDOLT BORNSTEIN NU, V3, P3

[6] HUGHES A, UNPUBLISHED

[7] ANISOTROPY IN ELECTRICAL PROPERTIES OF [001] SI/[0112] AI2O3 [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2304 - 2310

[8] MANASEVIT HM, 1966, MET SOC AIME, V242, P465

[9] USE OF PIEZORESISTIVE MATERIALS IN THE MEASUREMENT OF DISPLACEMENT, FORCE, AND TORQUE [J]. JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1957, 29 (10) : 1096 - 1101

[10] MASON WP, 1960, 15NY60 INSTR SOC AM