LARGE AREA GROWTH OF EXTREMELY UNIFORM ALGAAS/GAAS QUANTUM WELL STRUCTURES FOR LASER APPLICATIONS BY EFFECTIVE LP-MOVPE

被引：13

作者：

SCHMITZ, D ^{[1
]}

STRAUCH, G ^{[1
]}

KNAUF, J ^{[1
]}

JURGENSEN, H ^{[1
]}

HEYEN, M ^{[1
]}

WOLTER, K ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Crystals--Epitaxial Growth - Laser Beams--Applications - Photoluminescence - Semiconducting Gallium Arsenide;

D O I：

10.1016/0022-0248(88)90545-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In a production-type LP-MOVPE system at a reactor pressure of 20 mbar, AlxGa1-xAs/GaAs structures (014 cm-3 in the undoped GaAs and below n=1015 cm-3 in the undoped AlGaAs. Using slight intentional n-type doping, high mobilities also in Al0.3Ga0.7As are obtained. The outstanding capability of atomic layer control by the low pressure MOVPE process is demonstrated by controlled growth of graded wells, in which the compositional grading is performed in exact lattice constant steps.

引用

页码：312 / 317

页数：6

共 8 条

[1]

BACHEM KH, 1981, I PHYS C SER, V56, P65

[2]

BIMBERG D, 1987, J VACUUM SCI TECHN B, V5

[3]

GRUTZMACHER D, 1988, I PHYS C SER, V91

[4]

GRUTZMACHER DA, IN PRESS

[5] CONTROLLED UNIFORM GROWTH OF GAINASP-INP STRUCTURES FOR LASER APPLICATION ON 2 INCH WAFERS BY LP-MOVPE AT 20 MBAR [J].

MEYER, R ;

GRUTZMACHER, D ;

JURGENSEN, H ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :285-291

[6]

PUTZ N, 1983, P EURO CVD EINDHOVEN, V4, P103

[7] VERTICAL VERSUS HORIZONTAL REACTOR - AN OPTICAL STUDY OF THE GAS-PHASE IN A MOCVD REACTOR [J].

STOCK, L ;

RICHTER, W .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :144-150

[8]

ZACHAU M, COMMUNICATION

← 1 →